Infineon IPB026N06N N-channel MOSFET, 100 A, 60 V OptiMOS 5, 3-Pin TO-263
Product Information
Category:
Power MOSFET
Dimensions:
10.31 x 11.05 x 4.57mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
11.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-263
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4100 pF @ 30 V
Length:
10.31mm
Pin Count:
3
Forward Transconductance:
160S
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
136 W
Series:
OptiMOS 5
Maximum Gate Source Voltage:
±20 V
Height:
4.57mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.9 mΩ
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This is N-channel MOSFET 100 A 60 V OptiMOS 5 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB026N06N. It is of power mosfet category . The given dimensions of the product include 10.31 x 11.05 x 4.57mm. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.05mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-263. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4100 pf @ 30 v . Its accurate length is 10.31mm. It contains 3 pins. The forward transconductance is 160s . Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 136 w maximum power dissipation. The product optimos 5, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.57mm. In addition, it has a typical 17 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.9 mω maximum drain source resistance.
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