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Fairchild FQA9N90C_F109 N-channel MOSFET, 9 A, 900 V QFET, 3-Pin TO-3PN

FQA9N90C_F109 Fairchild  N-channel MOSFET, 9 A, 900 V QFET, 3-Pin TO-3PN
Fairchild Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
15.8 x 5 x 18.9mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2100 pF@ 25 V
Length:
15.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
18.9mm
Typical Turn-On Delay Time:
50 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
Checking for live stock

This is Fairchild N-channel MOSFET 9 A 900 V QFET 3-Pin TO-3PN manufactured by Fairchild Semiconductor. The manufacturer part number is FQA9N90C_F109. It is of power mosfet category . The given dimensions of the product include 15.8 x 5 x 18.9mm. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2100 pf@ 25 v . Its accurate length is 15.8mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 100 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 280 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 18.9mm. In addition, it has a typical 50 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.4 ω maximum drain source resistance.

pdf icon
Trans MOSFET N-CH 900V 9A 3-Pin TO-3P(Technical Reference)

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You will get a confirmation email regarding your order of Fairchild FQA9N90C_F109 N-channel MOSFET, 9 A, 900 V QFET, 3-Pin TO-3PN. You can also check on our website or by contacting our customer support team for further order details on Fairchild FQA9N90C_F109 N-channel MOSFET, 9 A, 900 V QFET, 3-Pin TO-3PN.
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