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NTP6412ANG, ON Semiconductor

NTP6412ANG ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220AB
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
Base Part Number:
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
Rds On (Max) @ Id, Vgs:
18.2mOhm @ 58A, 10V
FET Type:
Drive Voltage (Max Rds On, Min Rds On):
ON Semiconductor
Drain to Source Voltage (Vdss):
Vgs (Max):
Input Capacitance (Ciss) (Max) @ Vds:
3500pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Customer Reference:
Power Dissipation (Max):
167W (Tc)
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NTP6412ANG. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 100v 58a (tc) 167w (tc) through hole to-220ab. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: ntp6412. The maximum gate charge and given voltages include 100nc @ 10v. It has a maximum Rds On and voltage of 18.2mohm @ 58a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3500pf @ 25v. The product is available in through hole configuration. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 58a (tc). The product carries maximum power dissipation 167w (tc). This product use mosfet (metal oxide) technology.

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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)


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