Fairchild Semiconductor Fairchild IGBT, 41 A 400 V, 3-Pin D2PAK
Product Information
Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Maximum Continuous Collector Current:
41 A
Maximum Collector Emitter Voltage:
400 V
Height:
4.83mm
Width:
9.65mm
Length:
10.67mm
Maximum Gate Emitter Voltage:
±10V
Package Type:
D2PAK
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Technical Documents
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More Information
Automotive Ignition IGBT, Fairchild Semiconductor
These
EcoSPARK2
IGBT devices are optimised for driving automotive ignition coils. They have been stress tested to meet the AEC-Q101 standard.
Logic-level gate drive
ESD Protection
Applications: Automotive ignition coil driver circuits, Coil-on-Pl...
Automotive Ignition IGBT, Fairchild Semiconductor
These
EcoSPARK2
IGBT devices are optimised for driving automotive ignition coils. They have been stress tested to meet the AEC-Q101 standard.
Logic-level gate drive
ESD Protection
Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications.
RS Product Codes:
864-8802
FGB3040CS 400V 20A D2PAK
864-8805
FGB3040G2_F085 400V 25A DPAK-2
807-0767
FGD3040G2_F085 400V 25A DPAK
807-0776
FGD3440G2_F085 400V 25A DPAK
864-8818
FGB3440G2_F085 400V 25A D2PAK-2
864-8893
FGP3440G2_F085 400V 25A TO220
864-8880
FGI3040G2_F085 400V 25A I2PAK
864-8899
FGP3040G2_F085 400V 25A TO220
864-8827
FGD3245G2_F085 450V 23A DPAK
864-8809
FGB3245G2_F085 450V 23A D2PAK-2
Note
Quoted current ratings apply when junction temperature Tc = +110°C.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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