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Fairchild Semiconductor Fairchild IGBT, 41 A 400 V, 3-Pin D2PAK

Product Information
Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Maximum Continuous Collector Current:
41 A
Maximum Collector Emitter Voltage:
400 V
Height:
4.83mm
Width:
9.65mm
Length:
10.67mm
Maximum Gate Emitter Voltage:
±10V
Package Type:
D2PAK
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant

Technical Documents
Fairchild Semiconductor
FGB3040G2_F085 / FGD3040G2_F085 / FGP3040G2_F085 / FGI3040G2_F085, EcoSPARK2 300mJ, 400V, N-Channel Ignition IGBT(Technical Reference)
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More Information

Automotive Ignition IGBT, Fairchild Semiconductor These EcoSPARK2 IGBT devices are optimised for driving automotive ignition coils. They have been stress tested to meet the AEC-Q101 standard. Logic-level gate drive ESD Protection Applications: Automotive ignition coil driver circuits, Coil-on-Pl...
Automotive Ignition IGBT, Fairchild Semiconductor These EcoSPARK2 IGBT devices are optimised for driving automotive ignition coils. They have been stress tested to meet the AEC-Q101 standard. Logic-level gate drive ESD Protection Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications. RS Product Codes: 864-8802 FGB3040CS 400V 20A D2PAK 864-8805 FGB3040G2_F085 400V 25A DPAK-2 807-0767 FGD3040G2_F085 400V 25A DPAK 807-0776 FGD3440G2_F085 400V 25A DPAK 864-8818 FGB3440G2_F085 400V 25A D2PAK-2 864-8893 FGP3440G2_F085 400V 25A TO220 864-8880 FGI3040G2_F085 400V 25A I2PAK 864-8899 FGP3040G2_F085 400V 25A TO220 864-8827 FGD3245G2_F085 450V 23A DPAK 864-8809 FGB3245G2_F085 450V 23A D2PAK-2 Note Quoted current ratings apply when junction temperature Tc = +110°C. Standards AEC-Q101 IGBT Discretes & Modules, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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