ON Semiconductor HGTG20N60B3D

HGTG20N60B3D ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
80nC
Base Part Number:
HGTG20N60
Detailed Description:
IGBT 600V 40A 165W Through Hole TO-247
Reverse Recovery Time (trr):
55ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
40A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 20A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
475µJ (on), 1.05mJ (off)
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
165W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Current - Collector Pulsed (Icm):
160A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG20N60B3D. Features 80nc gate charge. Base Part Number: hgtg20n60. It features igbt 600v 40a 165w through hole to-247. It has a trr (reverse recovery time) of 55ns. The product is available in through hole configuration. The maximum collector current includes 40a. Features 2v @ 15v, 20a. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 475µj (on), 1.05mj (off). The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 165w. It carries standard input type. Moreover, the product comes in to-247-3. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Wafer Fab Change 08/Oct/2020(PCN Assembly/Origin)
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HGTG20N60B3D(Datasheets)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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