ON Semiconductor FGY75N60SMD

FGY75N60SMD ON Semiconductor
FGY75N60SMD
FGY75N60SMD
ON Semiconductor

Product Information

Dimensions:
15.87 x 4.82 x 20.32mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
750 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
150 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
28 Weeks
Current - Collector (Ic) (Max):
150A
Detailed Description:
IGBT Field Stop 600V 150A 750W Through Hole PowerTO-247-3
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 75A
Td (on/off) @ 25°C:
24ns/136ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3 Variant
Gate Charge:
248nC
Base Part Number:
FGY75
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
55ns
Switching Energy:
2.3mJ (on), 770µJ (off)
Test Condition:
400V, 75A, 3Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
225A
Mounting Type:
Through Hole
Supplier Device Package:
PowerTO-247-3
Packaging:
Tube
Power - Max:
750W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGY75N60SMD. The given dimensions of the product include 15.87 x 4.82 x 20.32mm. The product is available in through hole configuration. Provides up to 750 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 150 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 28 weeks of manufacturer standard lead time. The maximum collector current includes 150a. It features igbt field stop 600v 150a 750w through hole powerto-247-3. Features 2.5v @ 15v, 75a. Td (on/off) value of 24ns/136ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features 248nc gate charge. Base Part Number: fgy75. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 55ns. Provide switching energy up to 2.3mj (on), 770µj (off). Test condition included 400v, 75a, 3ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . powerto-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 750w.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/Mold Chg 20/Mar/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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