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ON Semiconductor FGH30S130P

FGH30S130P ON Semiconductor
FGH30S130P
FGH30S130P
ON Semiconductor

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 W
Maximum Collector Emitter Voltage:
1300 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
78nC
Base Part Number:
FGH30
Detailed Description:
IGBT Trench Field Stop 1300V 60A 500W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 30A
Supplier Device Package:
TO-247-3
Manufacturer Standard Lead Time:
26 Weeks
Voltage - Collector Emitter Breakdown (Max):
1300V
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
Power - Max:
500W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
90A
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGH30S130P. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 500 w maximum power dissipation. Whereas features a 1300 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 78nc gate charge. Base Part Number: fgh30. It features igbt trench field stop 1300v 60a 500w through hole to-247-3. The maximum collector current includes 60a. Features 2.3v @ 15v, 30a. to-247-3 is the supplier device package value. It has typical 26 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1300v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 500w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGH30S130P, 1300V, 30A Shorted-Anode IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGH30S130P(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

Yes. You can also search FGH30S130P on website for other similar products.
We accept all major payment methods for all products including ET14520558. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FGH30S130P directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FGH30S130P. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FGH30S130P.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520558 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520558.
Yes. We ship FGH30S130P Internationally to many countries around the world.