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ON Semiconductor NGTB25N120FL3WG

NGTB25N120FL3WG ON Semiconductor
NGTB25N120FL3WG
NGTB25N120FL3WG
ON Semiconductor

Product Information

Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
349 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
100 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Gate Capacitance:
3085pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Trench Field Stop 1200V 100A 349W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 25A
Td (on/off) @ 25°C:
15ns/109ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
136nC
Base Part Number:
NGTB25
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
114ns
Switching Energy:
1mJ (on), 700µJ (off)
Test Condition:
600V, 25A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
100A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
349W
Customer Reference:
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB25N120FL3WG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 349 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 100 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has approximately 3085pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 51 weeks of manufacturer standard lead time. The maximum collector current includes 100a. It features igbt trench field stop 1200v 100a 349w through hole to-247-3. Features 2.4v @ 15v, 25a. Td (on/off) value of 15ns/109ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 136nc gate charge. Base Part Number: ngtb25. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 114ns. Provide switching energy up to 1mj (on), 700µj (off). Test condition included 600v, 25a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 349w.

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NGTB25N120FL3WG, IGBT 1200V 25A - Ultra Field Stop(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly 26/Nov/2020(PCN Assembly/Origin)
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NGTB25N120FL3WG(Datasheets)

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