ON Semiconductor NXH350N100H4Q2F2P1G
Product Information
Input Capacitance (Cies) @ Vce:
24.146nF @ 20V
Base Part Number:
NXH350
Detailed Description:
IGBT Module Trench Field Stop Three Level Inverter 1000V 303A 276W Chassis Mount 42-PIM/Q2PACK (93x47)
Configuration:
Three Level Inverter
Mounting Type:
Chassis Mount
Current - Collector (Ic) (Max):
303A
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 375A
Supplier Device Package:
42-PIM/Q2PACK (93x47)
Voltage - Collector Emitter Breakdown (Max):
1000V
Packaging:
Tray
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
276W
Customer Reference:
Package / Case:
Module
Input:
Standard
IGBT Type:
Trench Field Stop
NTC Thermistor:
Yes
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NXH350N100H4Q2F2P1G. It holds 24.146nf @ 20v of input capacitance. Base Part Number: nxh350. It features igbt module trench field stop three level inverter 1000v 303a 276w chassis mount 42-pim/q2pack (93x47). The product is available in three level inverter configuration. The product is available in chassis mount configuration. The maximum collector current includes 303a. Features 2.3v @ 15v, 375a. 42-pim/q2pack (93x47) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1000v. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 276w. Moreover, the product comes in module. Its input values include standard. Features an IGBT trench field stop type. NTC Thermistor - yes. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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