ON Semiconductor NXH35C120L2C2ESG, DIP26 , N-Channel 3 Phase IGBT Module, 35 A max, 650 V, Through Hole
Product Information
Mounting Type:
Through Hole
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
6
Channel Type:
N
Maximum Continuous Collector Current:
35 A
Maximum Gate Emitter Voltage:
±20.0V
Package Type:
DIP26
Configuration:
3 Phase
Input Capacitance (Cies) @ Vce:
8.333nF @ 20V
Base Part Number:
NXH35
Detailed Description:
IGBT Module Three Phase Inverter with Brake 1200V 35A 20mW Through Hole 26-DIP
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
35A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 35A
Supplier Device Package:
26-DIP
Manufacturer Standard Lead Time:
23 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
20mW
Customer Reference:
Package / Case:
26-PowerDIP Module (1.199", 47.20mm)
Input:
Three Phase Bridge Rectifier
Configuration:
Three Phase Inverter with Brake
NTC Thermistor:
Yes
Current - Collector Cutoff (Max):
250µA
Manufacturer:
ON Semiconductor
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This is DIP26 N-Channel 3 Phase IGBT Module 35 A max 650 V Through Hole manufactured by ON Semiconductor. The manufacturer part number is NXH35C120L2C2ESG. The product is available in through hole configuration. Whereas features a 650 v of collector emitter voltage (max). It has 6 transistors . The product is available in [Cannel Type] channel. The product has a maximum 35 a continuous collector current . It offers a maximum ±20.0v gate emitter voltage . The package is a sort of dip26. The product is available in 3 phase configuration. It holds 8.333nf @ 20v of input capacitance. Base Part Number: nxh35. It features igbt module three phase inverter with brake 1200v 35a 20mw through hole 26-dip. The maximum collector current includes 35a. Features 2.4v @ 15v, 35a. 26-dip is the supplier device package value. It has typical 23 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 20mw. Moreover, the product comes in 26-powerdip module (1.199", 47.20mm). Its input values include three phase bridge rectifier. The product is available in three phase inverter with brake configuration. NTC Thermistor - yes. In addition, 250µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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