Infineon Technologies IPI147N12N3G

IPI147N12N3G Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 61µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Rds On (Max) @ Id, Vgs:
14.7mOhm @ 56A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Power Dissipation (Max):
107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 60 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C:
56A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPI147N12N3G. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 61µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 49 nc @ 10 v. It has a maximum Rds On and voltage of 14.7mohm @ 56a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 120 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 107w (tc). The product's input capacitance at maximum includes 3220 pf @ 60 v. The product is available in through hole configuration. The product coolmos™, is a highly preferred choice for users. pg-to262-3-1 is the supplier device package value. The continuous current drain at 25°C is 56a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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