Infineon Technologies BSB165N15NZ3G

Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 110µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
DirectFET™ Isometric MZ
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.8W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2800 pF @ 75 V
Mounting Type:
Surface Mount
Series:
OptiMOS®
Supplier Device Package:
MG-WDSON-2-9
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 45A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BSB165N15NZ3G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 110µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in directfet™ isometric mz. The maximum gate charge and given voltages include 35 nc @ 10 v. It has a maximum Rds On and voltage of 16.5mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 8v, 10v. It is shipped in bulk package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.8w (ta), 78w (tc). The product's input capacitance at maximum includes 2800 pf @ 75 v. The product is available in surface mount configuration. The product optimos®, is a highly preferred choice for users. mg-wdson-2-9 is the supplier device package value. The continuous current drain at 25°C is 9a (ta), 45a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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