onsemi NTB25P06T4G
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
120 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.83mm
Width:
9.65mm
Length:
10.29mm
Maximum Drain Source Resistance:
82 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
27 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
82mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
120W (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
1680 pF @ 25 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
27.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTB25
ECCN:
EAR99
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Yes. We ship NTB25P06T4G Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTB25P06T4G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 120 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.29mm. It provides up to 82 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 27 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 82mohm @ 25a, 10v. The maximum gate charge and given voltages include 50 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 120w (tj). The product's input capacitance at maximum includes 1680 pf @ 25 v. It has a long 16 weeks standard lead time. d2pak is the supplier device package value. The continuous current drain at 25°C is 27.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntb25, a base product number of the product. The product is designated with the ear99 code number.
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