onsemi FQI4N90TU
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
3.3Ohm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FQI4N90TU Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1056397
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
3.13W (Ta), 140W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-262 (I2PAK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQI4N90
ECCN:
EAR99
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FAQs
Yes. You can also search FQI4N90TU on website for other similar products.
We accept all major payment methods for all products including ET21520165. Please check your shopping cart at the time of order.
You can order onsemi brand products with FQI4N90TU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi FQI4N90TU. You can also check on our website or by contacting our customer support team for further order details on onsemi FQI4N90TU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21520165 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21520165.
Yes. We ship FQI4N90TU Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is FQI4N90TU. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 3.3ohm @ 2.1a, 10v. The maximum gate charge and given voltages include 30 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 900 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 3.13w (ta), 140w (tc). The product's input capacitance at maximum includes 1100 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-262 (i2pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 4.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqi4n90, a base product number of the product. The product is designated with the ear99 code number.
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