N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220AB onsemi FQP3N80C
Product Information
The onsemi FQP3N80C N-Channel MOSFET boasts an impressive 800V voltage rating and 3A current capability, housed in a durable 3-Pin TO-220AB package for optimal thermal performance and ease of integration. Experience superior power management with the FQP3N80C, featuring a robust 3A current capacity and 800V breakdown voltage, all within a space-efficient 3-Pin TO-220AB package, perfect for a wide range of applications.
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
10.1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
107 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.8 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1.5A, 10V
edacadModel:
FQP3N80C Models
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1055032
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
705 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP3
ECCN:
EAR99
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FAQs
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Yes. We ship FQP3N80C Internationally to many countries around the world.
The Onsemi FQP3N80C is a high-voltage, high-current N-channel MOSFET with a maximum drain-source voltage of 800V and a maximum continuous drain current of 3A. The product comes in a 3-pin TO-220AB package, which provides outstanding thermal performance and ease of mounting. It is a high-voltage MOSFET that offers several features and benefits making it suitable for various applications. Its low on-resistance, fast switching speed, and excellent thermal performance make it a perfect choice for high-current and high-temperature applications.
Where Can N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220AB onsemi FQP3N80C Be Used?
The FQP3N80C is suitable for various applications, such as:
Key Features and Benefits of N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220AB onsemi FQP3N80C:
The FQP3N80C has several features and benefits that make it suitable for various applications, such as power supplies, motor control, and lighting.
The FQP3N80C has a fast switching speed, which makes it suitable for applications that require rapid switching, such as motor control.
The FQP3N80C has a low on-resistance of 2.4 Ω, which reduces power dissipation and improves efficiency in high-current applications.
The TO-220AB package of the FQP3N80C provides excellent thermal performance, which allows the MOSFET to dissipate heat efficiently and operate at higher temperatures.
The FQP3N80C has a maximum drain-source voltage rating of 800 V, which makes it suitable for high-voltage applications. It also has a maximum continuous drain current rating of 3 A, making it ideal for high-current applications.
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