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Renesas Electronics America RJL6013DPE-WS#J3

RJL6013DPE-WS-J3 Renesas Electronics America RJL6013DPE-WS#J3
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
810mOhm @ 5.5A, 10V
Detailed Description:
N-Channel 600V 11A (Ta) 100W (Tc) Surface Mount 4-LDPAK
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Supplier Device Package:
4-LDPAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-83
Power Dissipation (Max):
100W (Tc)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJL6013DPE-WS#J3. It has a maximum Rds On and voltage of 810mohm @ 5.5a, 10v. It features n-channel 600v 11a (ta) 100w (tc) surface mount 4-ldpak. The product's input capacitance at maximum includes 1400pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 38nc @ 10v. 4-ldpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-83. The product carries maximum power dissipation 100w (tc). The continuous current drain at 25°C is 11a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)

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