ON Semiconductor NTTFS1D2N02P1E

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
23 Weeks
Detailed Description:
N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 934µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS1
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 4.5V
Rds On (Max) @ Id, Vgs:
1mOhm @ 38A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:
4040pF @ 13V
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 180A (Tc)
Customer Reference:
Power Dissipation (Max):
820mW (Ta), 52W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS1D2N02P1E. It has typical 23 weeks of manufacturer standard lead time. It features n-channel 25v 23a (ta), 180a (tc) 820mw (ta), 52w (tc) surface mount 8-pqfn (3.3x3.3). The typical Vgs (th) (max) of the product is 2v @ 934µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: nttfs1. The maximum gate charge and given voltages include 24nc @ 4.5v. It has a maximum Rds On and voltage of 1mohm @ 38a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is +16v, -12v. The product's input capacitance at maximum includes 4040pf @ 13v. The product is available in surface mount configuration. 8-pqfn (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 23a (ta), 180a (tc). The product carries maximum power dissipation 820mw (ta), 52w (tc). This product use mosfet (metal oxide) technology.

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NTTFS1D2N02P1E(Datasheets)

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