Maximum Continuous Drain Current:
80 A
Width:
6.3mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
214 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
6.4 mΩ
Manufacturer Standard Lead Time:
44 Weeks
Detailed Description:
N-Channel 100V 80A (Tc) 214W (Ta) Surface Mount 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDWS86068
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2220pF @ 50V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, PowerTrench®
Supplier Device Package:
8-DFN (5.1x6.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Customer Reference:
Power Dissipation (Max):
214W (Ta)
Technology:
MOSFET (Metal Oxide)
