Transphorm TP65H035WS
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.8V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 400 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
46.5A (Tc)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
TP65H035
ECCN:
EAR99
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FAQs
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You can order Transphorm brand products with TP65H035WS directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Transphorm TP65H035WS. You can also check on our website or by contacting our customer support team for further order details on Transphorm TP65H035WS.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16886924 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Transphorm" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16886924.
Yes. We ship TP65H035WS Internationally to many countries around the world.
This is manufactured by Transphorm. The manufacturer part number is TP65H035WS. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.8v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 41mohm @ 30a, 10v. The maximum gate charge and given voltages include 36 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 12v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 156w (tc). The product's input capacitance at maximum includes 1500 pf @ 400 v. It has a long 16 weeks standard lead time. The product is available in through hole configuration. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 46.5a (tc). This product use ganfet (cascode gallium nitride fet) technology. Moreover, it corresponds to tp65h035, a base product number of the product. The product is designated with the ear99 code number.
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