Dimensions:
6.8 x 2.5 x 6.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
38 W
Height:
6.3mm
Width:
2.5mm
Length:
6.8mm
Package Type:
TO-251AA
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3 + Tab
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 60V 11A (Tc) 38W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
RFD3055
Gate Charge (Qg) (Max) @ Vgs:
11.3nC @ 10V
Rds On (Max) @ Id, Vgs:
107mOhm @ 8A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Customer Reference:
Power Dissipation (Max):
38W (Tc)
Technology:
MOSFET (Metal Oxide)
