ON Semiconductor RFD3055LE

RFD3055LE ON Semiconductor
ON Semiconductor

Product Information

Dimensions:
6.8 x 2.5 x 6.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
38 W
Height:
6.3mm
Width:
2.5mm
Length:
6.8mm
Package Type:
TO-251AA
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3 + Tab
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 60V 11A (Tc) 38W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
RFD3055
Gate Charge (Qg) (Max) @ Vgs:
11.3nC @ 10V
Rds On (Max) @ Id, Vgs:
107mOhm @ 8A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Customer Reference:
Power Dissipation (Max):
38W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is RFD3055LE. The given dimensions of the product include 6.8 x 2.5 x 6.3mm. The product is available in through hole configuration. Provides up to 38 w maximum power dissipation. In addition, the height is 6.3mm. Furthermore, the product is 2.5mm wide. Its accurate length is 6.8mm. The package is a sort of to-251aa. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 + tab pins. It has typical 50 weeks of manufacturer standard lead time. It features n-channel 60v 11a (tc) 38w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Base Part Number: rfd3055. The maximum gate charge and given voltages include 11.3nc @ 10v. It has a maximum Rds On and voltage of 107mohm @ 8a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±16v. The product's input capacitance at maximum includes 350pf @ 25v. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). The product carries maximum power dissipation 38w (tc). This product use mosfet (metal oxide) technology.

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Datasheet RFD3055LE(Technical Reference)
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RFD3055LE/LESM, RFP3055LE(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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