ON Semiconductor NTMFS5C423NLT1G
Product Information
Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 1.95mm
Maximum Continuous Drain Current:
150 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
23 nC @ 4.5 V, 50 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3100 pF @ 20 V
Length:
5.1mm
Pin Count:
5
Forward Transconductance:
140S
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.95mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3 mΩ
Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
NTMFS5
Detailed Description:
N-Channel 40V 3.7W (Ta), 83W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
3100pF @ 20V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
Rds On (Max) @ Id, Vgs:
2mOhm @ 50A, 10V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3.7W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS5C423NLT1G. It is of power mosfet category . The given dimensions of the product include 5.1 x 6.1 x 1.95mm. While 150 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of dfn. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 4.5 v, 50 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3100 pf @ 20 v . Its accurate length is 5.1mm. It contains 5 pins. The forward transconductance is 140s . Whereas, its typical turn-off delay time is about 28 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 83 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.95mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3 mω maximum drain source resistance. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: ntmfs5. It features n-channel 40v 3.7w (ta), 83w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 3100pf @ 20v. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 50nc @ 10v. It has a maximum Rds On and voltage of 2mohm @ 50a, 10v. 5-dfn (5x6) (8-sofl) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3.7w (ta), 83w (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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