ON Semiconductor HUF75339P3
Product Information
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
110 nC @ 20 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12 mΩ
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
HUF75
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 20V
Rds On (Max) @ Id, Vgs:
12mOhm @ 75A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
55V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 25V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14525611 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14525611.
Yes. We ship HUF75339P3 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is HUF75339P3. While 75 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 110 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12 mω maximum drain source resistance. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 55v 75a (tc) 200w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: huf75. The maximum gate charge and given voltages include 130nc @ 20v. It has a maximum Rds On and voltage of 12mohm @ 75a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 55v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2000pf @ 25v. The product ultrafet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 200w (tc). This product use mosfet (metal oxide) technology.
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