Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
50 nC @ 20 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
128 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
7.49mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
26 mΩ
Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
HUF75
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 20V
Rds On (Max) @ Id, Vgs:
26mOhm @ 20A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
55V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 25V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
TO-252AA
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Customer Reference:
Power Dissipation (Max):
128W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is HUF75329D3ST. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 50 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 128 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 7.49mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 26 mω maximum drain source resistance. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 55v 20a (tc) 128w (tc) surface mount to-252aa. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: huf75. The maximum gate charge and given voltages include 65nc @ 20v. It has a maximum Rds On and voltage of 26mohm @ 20a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 55v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1060pf @ 25v. The product ultrafet™, is a highly preferred choice for users. to-252aa is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 20a (tc). The product carries maximum power dissipation 128w (tc). This product use mosfet (metal oxide) technology.
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