ON Semiconductor FQU13N06LTU-WS

FQU13N06LTU-WS ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
FQU13N06
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 5V
Rds On (Max) @ Id, Vgs:
115mOhm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 28W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQU13N06LTU-WS. It has typical 10 weeks of manufacturer standard lead time. It features n-channel 60v 11a (tc) 2.5w (ta), 28w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Base Part Number: fqu13n06. The maximum gate charge and given voltages include 6.4nc @ 5v. It has a maximum Rds On and voltage of 115mohm @ 5.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 350pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). The product carries maximum power dissipation 2.5w (ta), 28w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Site Add 14/Oct/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FQD13N06 22/Jul/2016(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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Yes. We ship FQU13N06LTU-WS Internationally to many countries around the world.