ON Semiconductor FQD30N06TM

FQD30N06TM ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 60V 22.7A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252, (D-Pak)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD30N06
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 11.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
945pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
22.7A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQD30N06TM. It has typical 34 weeks of manufacturer standard lead time. It features n-channel 60v 22.7a (tc) 2.5w (ta), 44w (tc) surface mount to-252, (d-pak). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd30n06. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 45mohm @ 11.4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 945pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. to-252, (d-pak) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 22.7a (tc). The product carries maximum power dissipation 2.5w (ta), 44w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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FQD30N06(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. We ship FQD30N06TM Internationally to many countries around the world.