ON Semiconductor FQD2N60CTM

FQD2N60CTM ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD2N60
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Rds On (Max) @ Id, Vgs:
4.7Ohm @ 950mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
235pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D-Pak
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.9A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQD2N60CTM. It has typical 38 weeks of manufacturer standard lead time. It features n-channel 600v 1.9a (tc) 2.5w (ta), 44w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd2n60. The maximum gate charge and given voltages include 12nc @ 10v. It has a maximum Rds On and voltage of 4.7ohm @ 950ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 235pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d-pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.9a (tc). The product carries maximum power dissipation 2.5w (ta), 44w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FQD2N60C, FQU2N60C(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)
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DPAK3 (TO−252 3 LD) Mechanical Case Outline(Other Related Documents)

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