ON Semiconductor FQB5N60CTM-WS

FQB5N60CTM-WS ON Semiconductor
FQB5N60CTM-WS
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 600V 4.5A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB5
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2.25A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
670pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Customer Reference:
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQB5N60CTM-WS. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 600v 4.5a (tc) 100w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb5. The maximum gate charge and given voltages include 19nc @ 10v. It has a maximum Rds On and voltage of 2.5ohm @ 2.25a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 670pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.5a (tc). The product carries maximum power dissipation 100w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FQB5N60CTM_WS(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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Yes. We ship FQB5N60CTM-WS Internationally to many countries around the world.