ON Semiconductor FDT86102LZ
Product Information
Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Width:
6.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
3.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
46 mΩ
Manufacturer Standard Lead Time:
25 Weeks
Detailed Description:
N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
FDT86
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 6.6A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1490pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SOT-223-4
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.6A (Ta)
Customer Reference:
Power Dissipation (Max):
2.2W (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship FDT86102LZ Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDT86102LZ. While 6.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.7mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 46 mω maximum drain source resistance. It has typical 25 weeks of manufacturer standard lead time. It features n-channel 100v 6.6a (ta) 2.2w (ta) surface mount sot-223-4. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: fdt86. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 28mohm @ 6.6a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1490pf @ 50v. The product powertrench®, is a highly preferred choice for users. sot-223-4 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.6a (ta). The product carries maximum power dissipation 2.2w (ta). This product use mosfet (metal oxide) technology.
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