ON Semiconductor FDS6692A
Product Information
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.47 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
19 mΩ
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 30V 9A (Ta) 1.47W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
FDS6692
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
11.5mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1610pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Customer Reference:
Power Dissipation (Max):
1.47W (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519851 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519851.
Yes. We ship FDS6692A Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDS6692A. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.9mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.9mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.47 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.575mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 19 mω maximum drain source resistance. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 30v 9a (ta) 1.47w (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: fds6692. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 11.5mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1610pf @ 15v. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 1.47w (ta). This product use mosfet (metal oxide) technology.
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