Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
43 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
14 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
P-Channel 20V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
FDS65
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 4.5V
Rds On (Max) @ Id, Vgs:
14mOhm @ 11A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
4044pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDS6576. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 43 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 14 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 39 weeks of manufacturer standard lead time. It features p-channel 20v 11a (ta) 2.5w (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: fds65. The maximum gate charge and given voltages include 60nc @ 4.5v. It has a maximum Rds On and voltage of 14mohm @ 11a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 4044pf @ 10v. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology.
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