Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
20 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
FDS56
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
Rds On (Max) @ Id, Vgs:
20mOhm @ 8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1850pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
