Maximum Continuous Drain Current:
10.6 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12 mΩ
Manufacturer Standard Lead Time:
29 Weeks
Detailed Description:
N-Channel 60V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMS56
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Rds On (Max) @ Id, Vgs:
11.5mOhm @ 10.6A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2800pF @ 30V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10.6A (Ta), 22A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS5672. While 10.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of mlp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12 mω maximum drain source resistance. It has typical 29 weeks of manufacturer standard lead time. It features n-channel 60v 10.6a (ta), 22a (tc) 2.5w (ta), 78w (tc) surface mount 8-mlp (5x6), power56. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: fdms56. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 11.5mohm @ 10.6a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2800pf @ 30v. The product ultrafet™, is a highly preferred choice for users. 8-mlp (5x6), power56 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10.6a (ta), 22a (tc). The product carries maximum power dissipation 2.5w (ta), 78w (tc). This product use mosfet (metal oxide) technology.
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