Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V
Channel Type:
P
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
97 mΩ
Manufacturer Standard Lead Time:
21 Weeks
Detailed Description:
P-Channel 12V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Base Part Number:
FDME90
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 4.5V
Rds On (Max) @ Id, Vgs:
22mOhm @ 8A, 4.5V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
2315pF @ 6V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
MicroFet 1.6x1.6 Thin
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Customer Reference:
Power Dissipation (Max):
2.1W (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDME905PT. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. It has a maximum of 12 v drain source voltage. The package is a sort of mlp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.6mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 97 mω maximum drain source resistance. It has typical 21 weeks of manufacturer standard lead time. It features p-channel 12v 8a (ta) 2.1w (ta) surface mount microfet 1.6x1.6 thin. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-powerufdfn. Base Part Number: fdme90. The maximum gate charge and given voltages include 20nc @ 4.5v. It has a maximum Rds On and voltage of 22mohm @ 8a, 4.5v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 2315pf @ 6v. The product powertrench®, is a highly preferred choice for users. microfet 1.6x1.6 thin is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (ta). The product carries maximum power dissipation 2.1w (ta). This product use mosfet (metal oxide) technology.
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