ON Semiconductor FDB86102LZ
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
42 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
959 pF @ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
18.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
6.6 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB861
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 10V
Rds On (Max) @ Id, Vgs:
24mOhm @ 8.3A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1275pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.3A (Ta), 30A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FDB86102LZ. It is of power mosfet category . The given dimensions of the product include 10.67 x 11.33 x 4.83mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. It provides up to 42 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 959 pf @ 50 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 18.2 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. In addition, it has a typical 6.6 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 100v 8.3a (ta), 30a (tc) 3.1w (ta) surface mount to-263ab. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb861. The maximum gate charge and given voltages include 21nc @ 10v. It has a maximum Rds On and voltage of 24mohm @ 8.3a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1275pf @ 50v. The product powertrench®, is a highly preferred choice for users. to-263ab is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8.3a (ta), 30a (tc). The product carries maximum power dissipation 3.1w (ta). This product use mosfet (metal oxide) technology.
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