ON Semiconductor FDB150N10

FDB150N10 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 100V 57A (Tc) 110W (Tc) Surface Mount D²PAK
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB150
Gate Charge (Qg) (Max) @ Vgs:
69nC @ 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 49A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4760pF @ 25V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D²PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Customer Reference:
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDB150N10. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 100v 57a (tc) 110w (tc) surface mount d²pak. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb150. The maximum gate charge and given voltages include 69nc @ 10v. It has a maximum Rds On and voltage of 15mohm @ 49a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4760pf @ 25v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. d²pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 57a (tc). The product carries maximum power dissipation 110w (tc). This product use mosfet (metal oxide) technology.

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Update 29/Sep/2020(PCN Assembly/Origin)
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FDB150N10(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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SOA curve 01/Jul/2013(PCN Design/Specification)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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