ON Semiconductor FDA38N30

FDA38N30 ON Semiconductor
ON Semiconductor

Product Information

Dimensions:
16.2 x 5 x 18.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
312 W
Height:
18.9mm
Width:
5mm
Length:
16.2mm
Package Type:
TO-3P
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 300V 38A (Tc) 312W (Tc) Through Hole TO-3PN
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FDA38
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 19A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
300V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Customer Reference:
Power Dissipation (Max):
312W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDA38N30. The given dimensions of the product include 16.2 x 5 x 18.9mm. The product is available in through hole configuration. Provides up to 312 w maximum power dissipation. In addition, the height is 18.9mm. Furthermore, the product is 5mm wide. Its accurate length is 16.2mm. The package is a sort of to-3p. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. It has typical 34 weeks of manufacturer standard lead time. It features n-channel 300v 38a (tc) 312w (tc) through hole to-3pn. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Base Part Number: fda38. The maximum gate charge and given voltages include 60nc @ 10v. It has a maximum Rds On and voltage of 85mohm @ 19a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 300v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 2600pf @ 25v. The product unifet™, is a highly preferred choice for users. to-3pn is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 38a (tc). The product carries maximum power dissipation 312w (tc). This product use mosfet (metal oxide) technology.

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Datasheet FDA38N30(Technical Reference)
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Assembly Site Transfer 06/Apr/2015(PCN Assembly/Origin)
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FDA38N30(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Heat Sink Drawing Update 11/Feb/2014(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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