ON Semiconductor FCPF125N65S3

FCPF125N65S3 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
47 Weeks
Detailed Description:
N-Channel 650V 24A (Tc) 38W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
4.5V @ 2.4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF125
Gate Charge (Qg) (Max) @ Vgs:
44nC @ 10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1790pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220F
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Customer Reference:
Power Dissipation (Max):
38W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCPF125N65S3. It has typical 47 weeks of manufacturer standard lead time. It features n-channel 650v 24a (tc) 38w (tc) through hole to-220f. The typical Vgs (th) (max) of the product is 4.5v @ 2.4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fcpf125. The maximum gate charge and given voltages include 44nc @ 10v. It has a maximum Rds On and voltage of 125mohm @ 12a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1790pf @ 400v. The product is available in through hole configuration. The product superfet® iii, is a highly preferred choice for users. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 24a (tc). The product carries maximum power dissipation 38w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly 11/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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SuperFet Datasheet Chg 30/Jul/2019(PCN Design/Specification)
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FCPF125N65S3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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