ON Semiconductor FCP290N80

FCP290N80 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 800V 17A (Tc) 212W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4.5V @ 1.7mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FCP290
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
Rds On (Max) @ Id, Vgs:
290mOhm @ 8.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3205pF @ 100V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Customer Reference:
Power Dissipation (Max):
212W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCP290N80. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 800v 17a (tc) 212w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4.5v @ 1.7ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fcp290. The maximum gate charge and given voltages include 75nc @ 10v. It has a maximum Rds On and voltage of 290mohm @ 8.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3205pf @ 100v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 17a (tc). The product carries maximum power dissipation 212w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Asembly Chg 7/May/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FCP290N80(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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