ON Semiconductor FCMT199N60

FCMT199N60 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Base Part Number:
FCMT199
Gate Charge (Qg) (Max) @ Vgs:
74nC @ 10V
Rds On (Max) @ Id, Vgs:
199mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2950pF @ 100V
Mounting Type:
Surface Mount
Series:
SuperFET® II
Supplier Device Package:
Power88
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Customer Reference:
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCMT199N60. It has typical 51 weeks of manufacturer standard lead time. It features n-channel 600v 20.2a (tc) 208w (tc) surface mount power88. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-powertsfn. Base Part Number: fcmt199. The maximum gate charge and given voltages include 74nc @ 10v. It has a maximum Rds On and voltage of 199mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2950pf @ 100v. The product is available in surface mount configuration. The product superfet® ii, is a highly preferred choice for users. power88 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 20.2a (tc). The product carries maximum power dissipation 208w (tc). This product use mosfet (metal oxide) technology.

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FCMT199N60(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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