ON Semiconductor FCH072N60F-F085

FCH072N60F-F085 ON Semiconductor
FCH072N60F-F085
ON Semiconductor

Product Information

Detailed Description:
N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Base Part Number:
FCH072
Gate Charge (Qg) (Max) @ Vgs:
210nC @ 10V
Rds On (Max) @ Id, Vgs:
72mOhm @ 26A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6330pF @ 100V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101, SuperFET® II
Supplier Device Package:
TO-247
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Customer Reference:
Power Dissipation (Max):
481W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCH072N60F-F085. It features n-channel 600v 52a (tc) 481w (tc) through hole to-247. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Base Part Number: fch072. The maximum gate charge and given voltages include 210nc @ 10v. It has a maximum Rds On and voltage of 72mohm @ 26a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6330pf @ 100v. The product is available in through hole configuration. The product automotive, aec-q101, superfet® ii, is a highly preferred choice for users. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 52a (tc). The product carries maximum power dissipation 481w (tc). This product use mosfet (metal oxide) technology.

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Mold compound change 14/Jun/2019(PCN Assembly/Origin)
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Mult Dev Datasheet Chg 20/Dec/2019(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FCH072N60F-F085(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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