ON Semiconductor FCD850N80Z

FCD850N80Z ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
49 Weeks
Detailed Description:
N-Channel 800V 6A (Tc) 75W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4.5V @ 600µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FCD850
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1315pF @ 100V
Mounting Type:
Surface Mount
Series:
SuperFET® II
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCD850N80Z. It has typical 49 weeks of manufacturer standard lead time. It features n-channel 800v 6a (tc) 75w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4.5v @ 600µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fcd850. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 850mohm @ 3a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1315pf @ 100v. The product is available in surface mount configuration. The product superfet® ii, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6a (tc). The product carries maximum power dissipation 75w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FCx850N80Z(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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