Maximum Continuous Drain Current:
10 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
±30 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
360 mΩ
Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FCD360
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
730pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
D-PAK (TO-252)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Customer Reference:
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
