Fairchild FQI4N80TU N-channel MOSFET, 3.9 A, 800 V QFET, 3-Pin I2PAK
Product Information
Category:
Power MOSFET
Dimensions:
9.9 x 4.5 x 9.2mm
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
I2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
680 pF@ 25 V
Length:
9.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.13 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
9.2mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.95A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Power Dissipation (Max):
3.13W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-262 (I2PAK)
Current - Continuous Drain (Id) @ 25°C:
3.9A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is Fairchild N-channel MOSFET 3.9 A 800 V QFET 3-Pin I2PAK manufactured by Fairchild Semiconductor. The manufacturer part number is FQI4N80TU. It is of power mosfet category . The given dimensions of the product include 9.9 x 4.5 x 9.2mm. While 3.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of i2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 680 pf@ 25 v . Its accurate length is 9.9mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 35 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 3.13 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.2mm. In addition, it has a typical 16 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.6 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. The maximum gate charge and given voltages include 25 nc @ 10 v. It has a maximum Rds On and voltage of 3.6ohm @ 1.95a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 3.13w (ta), 130w (tc). The product's input capacitance at maximum includes 880 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-262 (i2pak) is the supplier device package value. The continuous current drain at 25°C is 3.9a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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