Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.8mm
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
250 pF @ 25 V
Length:
6.7mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Series:
UltraFET
Maximum Gate Source Voltage:
±20 V
Height:
1.8mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
90 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 20 V
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Power Dissipation (Max):
1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
UltraFET™
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUFA75307
ECCN:
EAR99
