Fairchild FDP12N50NZ N-channel MOSFET, 11.5 A, 500 V UniFET, 3-Pin TO-220
Product Information
Dimensions:
10.36 x 4.9 x 16.07mm
Maximum Continuous Drain Current:
11.5 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
945 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
170 W
Series:
UniFET
Maximum Gate Source Voltage:
±25 V
Height:
16.07mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
520 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
520mOhm @ 5.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Power Dissipation (Max):
170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1235 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is Fairchild N-channel MOSFET 11.5 A 500 V UniFET 3-Pin TO-220 manufactured by Fairchild Semiconductor. The manufacturer part number is FDP12N50NZ. The given dimensions of the product include 10.36 x 4.9 x 16.07mm. While 11.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 945 pf @ 25 v . Its accurate length is 10.36mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 60 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 170 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±25 v. In addition, the height is 16.07mm. In addition, it has a typical 20 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 520 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 30 nc @ 10 v. It has a maximum Rds On and voltage of 520mohm @ 5.75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±25v. The product carries maximum power dissipation 170w (tc). The product's input capacitance at maximum includes 1235 pf @ 25 v. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 11.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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