Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.4mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
385 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
930 pF@ 100 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
36.9 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
83.3 W
Series:
SupreMOS
Maximum Gate Source Voltage:
±30 V
Height:
9.4mm
Typical Turn-On Delay Time:
12.7 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
385mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/13514512
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Power Dissipation (Max):
83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1240 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMOS™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
ECCN:
EAR99
Technology:
MOSFET (Metal Oxide)
edacadModel:
FCP9N60N Models
This is Fairchild N-channel MOSFET 9 A 600 V SupreMOS 3-Pin TO-220 manufactured by Fairchild Semiconductor. The manufacturer part number is FCP9N60N. It is of power mosfet category . The given dimensions of the product include 10.67 x 4.83 x 9.4mm. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. It provides up to 385 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 930 pf@ 100 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 36.9 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 83.3 w maximum power dissipation. The product supremos, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.4mm. In addition, it has a typical 12.7 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 385mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 29 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 83.3w (tc). The product's input capacitance at maximum includes 1240 pf @ 100 v. The product supermos™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 9a (tc). The product is designated with the ear99 code number. This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.