ON Semiconductor NTS4101PT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
6.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
329 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
160 mΩ
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.37 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
48 Weeks
Detailed Description:
P-Channel 20V 1.37A (Ta) 329mW (Ta) Surface Mount SC-70-3 (SOT323)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Base Part Number:
NTS4101
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
120mOhm @ 1A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
840pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.37A (Ta)
Customer Reference:
Power Dissipation (Max):
329mW (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship NTS4101PT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTS4101PT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 6.4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 329 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 160 mω maximum drain source resistance. The package is a sort of sot-323 (sc-70). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.37 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 48 weeks of manufacturer standard lead time. It features p-channel 20v 1.37a (ta) 329mw (ta) surface mount sc-70-3 (sot323). The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. Base Part Number: nts4101. The maximum gate charge and given voltages include 9nc @ 4.5v. It has a maximum Rds On and voltage of 120mohm @ 1a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 840pf @ 20v. sc-70-3 (sot323) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.37a (ta). The product carries maximum power dissipation 329mw (ta). This product use mosfet (metal oxide) technology.
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