ON Semiconductor NTS4173PT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
4.8 nC @ 4.5 V, 10.1 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Base Part Number:
NTS417
Gate Charge (Qg) (Max) @ Vgs:
10.1nC @ 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 1.2A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
430pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Customer Reference:
Power Dissipation (Max):
290mW (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTS4173PT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTS4173PT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 4.8 nc @ 4.5 v, 10.1 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of sot-323 (sc-70). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 15 weeks of manufacturer standard lead time. It features p-channel 30v 1.2a (ta) 290mw (ta) surface mount sc-70-3 (sot323). The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. Base Part Number: nts417. The maximum gate charge and given voltages include 10.1nc @ 10v. It has a maximum Rds On and voltage of 150mohm @ 1.2a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 430pf @ 15v. sc-70-3 (sot323) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.2a (ta). The product carries maximum power dissipation 290mw (ta). This product use mosfet (metal oxide) technology.
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