Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 0.9mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Maximum Drain Source Resistance:
310 mΩ
Package Type:
CPH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
172 pF @ -10 V
Length:
2.9mm
Pin Count:
6
Typical Turn-Off Delay Time:
19.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Typical Turn-On Delay Time:
4.6 ns
Base Part Number:
CPH635
Detailed Description:
P-Channel 30V 3A (Ta) 1.6W (Ta) Surface Mount 6-CPH
Input Capacitance (Ciss) (Max) @ Vds:
172pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
169mOhm @ 1.5A, 10V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 10V
Supplier Device Package:
6-CPH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max):
1.6W (Ta)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is CPH6355-TL-H. It is of power mosfet category . The given dimensions of the product include 2.9 x 1.6 x 0.9mm. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. It provides up to 310 mω maximum drain source resistance. The package is a sort of cph. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 172 pf @ -10 v . Its accurate length is 2.9mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 19.4 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. In addition, it has a typical 4.6 ns turn-on delay time . Base Part Number: cph635. It features p-channel 30v 3a (ta) 1.6w (ta) surface mount 6-cph. The product's input capacitance at maximum includes 172pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It has a maximum Rds On and voltage of 169mohm @ 1.5a, 10v. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 3.9nc @ 10v. 6-cph is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The product carries maximum power dissipation 1.6w (ta). The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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