ON Semiconductor NTB6413ANT4G

NTB6413ANT4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 100V 42A (Tc) 136W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
NTB64
Gate Charge (Qg) (Max) @ Vgs:
51nC @ 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 42A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1800pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Customer Reference:
Power Dissipation (Max):
136W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTB6413ANT4G. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 100v 42a (tc) 136w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: ntb64. The maximum gate charge and given voltages include 51nc @ 10v. It has a maximum Rds On and voltage of 28mohm @ 42a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1800pf @ 25v. The product is available in surface mount configuration. d2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 42a (tc). The product carries maximum power dissipation 136w (tc). This product use mosfet (metal oxide) technology.

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NTB,NTP6413AN(Datasheets)
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Mult Devices 14/Jul/2019(PCN Design/Specification)
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Cancellation 13/Aug/2020(PCN Design/Specification)

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